US6M2GTR Pricing (USD) [407677PC Stock]
- 1 pcs$0.09073
- Nimewo Pati:
- US6M2GTR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- 2.5V DRIVE NCHPCH MOSFET 6 PIN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor US6M2GTR electronic components. US6M2GTR can be shipped within 24 hours after order. If you have any demands for US6M2GTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US6M2GTR Atribi pwodwi yo
Nimewo Pati :
US6M2GTR
Manifakti :
Rohm Semiconductor
Deskripsyon :
2.5V DRIVE NCHPCH MOSFET 6 PIN
Seri :
-
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V, 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A, 1A
RD sou (Max) @ Id, Vgs :
240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA, 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 4.5V, 2.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
80pF @ 10V, 150pF @ 10V
Pouvwa - Max :
1W
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
TUMT6
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