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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. SCH1430-TL-H

ON Semiconductor - SCH1430-TL-H

KEY Part #: K6421496

SCH1430-TL-H Pricing (USD) [645286PC Stock]

  • 1 pcs$0.05761
  • 5,000 pcs$0.05732
Nimewo Pati:
SCH1430-TL-H
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 2A SCH6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in ON Semiconductor SCH1430-TL-H electronic components. SCH1430-TL-H can be shipped within 24 hours after order. If you have any demands for SCH1430-TL-H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SCH1430-TL-H Atribi pwodwi yo

Nimewo Pati : SCH1430-TL-H
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 2A SCH6
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 125 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 128pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-SCH
Pake / Ka : SOT-563, SOT-666

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