IXYS - IXFH34N50P3

KEY Part #: K6395048

IXFH34N50P3 Pricing (USD) [14773PC Stock]

  • 1 pcs$3.06727
  • 10 pcs$2.75966
  • 100 pcs$2.26899
  • 500 pcs$1.90103
  • 1,000 pcs$1.65573

Nimewo Pati:
IXFH34N50P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 34A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - RF, Diodes - Rèkteur - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFH34N50P3 electronic components. IXFH34N50P3 can be shipped within 24 hours after order. If you have any demands for IXFH34N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH34N50P3 Atribi pwodwi yo

Nimewo Pati : IXFH34N50P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 34A TO-247
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 170 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3260pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 695W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3