Nexperia USA Inc. - PMV30UN2VL

KEY Part #: K6421606

PMV30UN2VL Pricing (USD) [993639PC Stock]

  • 1 pcs$0.03748
  • 10,000 pcs$0.03729

Nimewo Pati:
PMV30UN2VL
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 20V 5.4A TO236AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMV30UN2VL electronic components. PMV30UN2VL can be shipped within 24 hours after order. If you have any demands for PMV30UN2VL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMV30UN2VL Atribi pwodwi yo

Nimewo Pati : PMV30UN2VL
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 20V 5.4A TO236AB
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 32 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 655pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 490mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB
Pake / Ka : TO-236-3, SC-59, SOT-23-3