IXTT1N300P3HV Pricing (USD) [3224PC Stock]
- 1 pcs$14.77927
- 10 pcs$13.67106
- 100 pcs$11.67562
- Nimewo Pati:
- IXTT1N300P3HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 2000V TO 3000V POLAR3 POWER MOSF.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXTT1N300P3HV electronic components. IXTT1N300P3HV can be shipped within 24 hours after order. If you have any demands for IXTT1N300P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT1N300P3HV Atribi pwodwi yo
Nimewo Pati :
IXTT1N300P3HV
Manifakti :
IXYS
Deskripsyon :
2000V TO 3000V POLAR3 POWER MOSF
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
3000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
50 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
895pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
195W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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