[4671PC Stock]
- Nimewo Pati:
- ZXMN2A04DN8TC
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 5.9A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN2A04DN8TC electronic components. ZXMN2A04DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN2A04DN8TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2A04DN8TC Atribi pwodwi yo
Nimewo Pati :
ZXMN2A04DN8TC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 5.9A 8SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.9A
RD sou (Max) @ Id, Vgs :
25 mOhm @ 5.9A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
22.1nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
1880pF @ 10V
Pouvwa - Max :
1.8W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP
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