Infineon Technologies - IRLHS6276TRPBF

KEY Part #: K6523889

IRLHS6276TRPBF Pricing (USD) [343563PC Stock]

  • 1 pcs$0.10766
  • 4,000 pcs$0.09872

Nimewo Pati:
IRLHS6276TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 20V 4.5A PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - RF, Tiristors - SCR, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRLHS6276TRPBF electronic components. IRLHS6276TRPBF can be shipped within 24 hours after order. If you have any demands for IRLHS6276TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLHS6276TRPBF Atribi pwodwi yo

Nimewo Pati : IRLHS6276TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 20V 4.5A PQFN
Seri : HEXFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A
RD sou (Max) @ Id, Vgs : 45 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 310pF @ 10V
Pouvwa - Max : 1.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-VQFN
Pake Aparèy Founisè : 6-PQFN (2x2)

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