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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTHD3102CT1G

ON Semiconductor - NTHD3102CT1G

KEY Part #: K6525008

NTHD3102CT1G Pricing (USD) [355350PC Stock]

  • 1 pcs$0.10461
  • 3,000 pcs$0.10409
Nimewo Pati:
NTHD3102CT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N/P-CH 20V 4A/3.1A 1206A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTHD3102CT1G electronic components. NTHD3102CT1G can be shipped within 24 hours after order. If you have any demands for NTHD3102CT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTHD3102CT1G Atribi pwodwi yo

Nimewo Pati : NTHD3102CT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N/P-CH 20V 4A/3.1A 1206A
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A, 3.1A
RD sou (Max) @ Id, Vgs : 45 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7.9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 510pF @ 10V
Pouvwa - Max : 1.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : ChipFET™

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