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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTHD3100CT3G

ON Semiconductor - NTHD3100CT3G

KEY Part #: K6524504

[3809PC Stock]

    Nimewo Pati:
    NTHD3100CT3G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N/P-CH 20V CHIPFET.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTHD3100CT3G electronic components. NTHD3100CT3G can be shipped within 24 hours after order. If you have any demands for NTHD3100CT3G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTHD3100CT3G Atribi pwodwi yo

    Nimewo Pati : NTHD3100CT3G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N/P-CH 20V CHIPFET
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A, 3.2A
    RD sou (Max) @ Id, Vgs : 80 mOhm @ 2.9A, 4.5V
    Vgs (th) (Max) @ Id : 1.2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 2.3nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 165pF @ 10V
    Pouvwa - Max : 1.1W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SMD, Flat Lead
    Pake Aparèy Founisè : ChipFET™

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