IXYS - IXFH50N20

KEY Part #: K6399912

IXFH50N20 Pricing (USD) [9590PC Stock]

  • 1 pcs$4.94025
  • 10 pcs$4.44710
  • 100 pcs$3.65662
  • 500 pcs$3.06364

Nimewo Pati:
IXFH50N20
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 200V 50A TO-247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - TRIACs, Diodes - Rèkteur - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in IXYS IXFH50N20 electronic components. IXFH50N20 can be shipped within 24 hours after order. If you have any demands for IXFH50N20, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH50N20 Atribi pwodwi yo

Nimewo Pati : IXFH50N20
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 200V 50A TO-247AD
Seri : HiPerFET™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 220nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3

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