Vishay Siliconix - SIRA01DP-T1-GE3

KEY Part #: K6405246

SIRA01DP-T1-GE3 Pricing (USD) [156447PC Stock]

  • 1 pcs$0.23642

Nimewo Pati:
SIRA01DP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 30V POWERPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIRA01DP-T1-GE3 electronic components. SIRA01DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA01DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA01DP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIRA01DP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 30V POWERPAK SO-8
Seri : TrenchFET® Gen IV
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Ta), 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.9 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 112nC @ 10V
Vgs (Max) : +16V, -20V
Antre kapasite (Ciss) (Max) @ Vds : 3490pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Ta), 62.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8

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