IXYS - IXGT60N60C3D1

KEY Part #: K6421974

IXGT60N60C3D1 Pricing (USD) [12484PC Stock]

  • 1 pcs$3.47561
  • 30 pcs$3.45832

Nimewo Pati:
IXGT60N60C3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 75A 380W TO268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXGT60N60C3D1 electronic components. IXGT60N60C3D1 can be shipped within 24 hours after order. If you have any demands for IXGT60N60C3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGT60N60C3D1 Atribi pwodwi yo

Nimewo Pati : IXGT60N60C3D1
Manifakti : IXYS
Deskripsyon : IGBT 600V 75A 380W TO268
Seri : GenX3™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 75A
Kouran - Pèseptè batman (Icm) : 300A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 40A
Pouvwa - Max : 380W
Oblije chanje enèji : 800µJ (on), 450µJ (off)
Kalite Antre : Standard
Gate chaje : 115nC
Td (on / off) @ 25 ° C : 21ns/70ns
Kondisyon egzamen an : 480V, 40A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) : 25ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè : TO-268