IPG20N04S4L11ATMA1 Pricing (USD) [202548PC Stock]
- 1 pcs$0.18261
- 5,000 pcs$0.16757
- Nimewo Pati:
- IPG20N04S4L11ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPG20N04S4L11ATMA1 electronic components. IPG20N04S4L11ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N04S4L11ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N04S4L11ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPG20N04S4L11ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 8TDSON
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
11.6 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 15µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1990pF @ 25V
Pouvwa - Max :
41W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
PG-TDSON-8-4
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