IXFQ120N25X3 Pricing (USD) [9843PC Stock]
- 1 pcs$4.18665
- Nimewo Pati:
- IXFQ120N25X3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CHANNEL 250V 120A TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - JFETs, Diodes - Zener - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXFQ120N25X3 electronic components. IXFQ120N25X3 can be shipped within 24 hours after order. If you have any demands for IXFQ120N25X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ120N25X3 Atribi pwodwi yo
Nimewo Pati :
IXFQ120N25X3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CHANNEL 250V 120A TO3P
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7870pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
520W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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