IXTA1N200P3HV Pricing (USD) [14212PC Stock]
- 1 pcs$9.08068
- 10 pcs$8.25601
- 100 pcs$6.67528
- Nimewo Pati:
- IXTA1N200P3HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 2000V 1A TO-263HV.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA1N200P3HV electronic components. IXTA1N200P3HV can be shipped within 24 hours after order. If you have any demands for IXTA1N200P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA1N200P3HV Atribi pwodwi yo
Nimewo Pati :
IXTA1N200P3HV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 2000V 1A TO-263HV
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
2000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
23.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
646pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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