Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 20V 5A 6WSON
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A
RD sou (Max) @ Id, Vgs :
27 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
469pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-WSON (2x2)