IXYS - IXTP50N20PM

KEY Part #: K6394615

IXTP50N20PM Pricing (USD) [25498PC Stock]

  • 1 pcs$1.61631
  • 50 pcs$1.36344

Nimewo Pati:
IXTP50N20PM
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 200V 20A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Diodes - RF, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in IXYS IXTP50N20PM electronic components. IXTP50N20PM can be shipped within 24 hours after order. If you have any demands for IXTP50N20PM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP50N20PM Atribi pwodwi yo

Nimewo Pati : IXTP50N20PM
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 200V 20A TO-220
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2720pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 90W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220 Isolated Tab
Pake / Ka : TO-220-3 Full Pack, Isolated Tab