[856PC Stock]
- Nimewo Pati:
- TK60D08J1(Q)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 75V 60A TO220W.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Single and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK60D08J1(Q) electronic components. TK60D08J1(Q) can be shipped within 24 hours after order. If you have any demands for TK60D08J1(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK60D08J1(Q) Atribi pwodwi yo
Nimewo Pati :
TK60D08J1(Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 75V 60A TO220W
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
7.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5450pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
140W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220(W)
Pake / Ka :
TO-220-3
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