Toshiba Semiconductor and Storage - TK60D08J1(Q)

KEY Part #: K6407778

[856PC Stock]


    Nimewo Pati:
    TK60D08J1(Q)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET N-CH 75V 60A TO220W.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Tiristors - TRIACs and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TK60D08J1(Q) electronic components. TK60D08J1(Q) can be shipped within 24 hours after order. If you have any demands for TK60D08J1(Q), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TK60D08J1(Q) Atribi pwodwi yo

    Nimewo Pati : TK60D08J1(Q)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET N-CH 75V 60A TO220W
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 75V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 7.8 mOhm @ 30A, 10V
    Vgs (th) (Max) @ Id : 2.3V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 5450pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 140W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220(W)
    Pake / Ka : TO-220-3

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