Nimewo Pati :
TK60D08J1(Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 75V 60A TO220W
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
7.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
86nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
5450pF @ 10V
Disipasyon Pouvwa (Max) :
140W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220(W)