IXYS - IXTK120N65X2

KEY Part #: K6398116

IXTK120N65X2 Pricing (USD) [5259PC Stock]

  • 1 pcs$9.05751
  • 10 pcs$8.23562
  • 100 pcs$6.65880

Nimewo Pati:
IXTK120N65X2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 650V 120A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTK120N65X2 electronic components. IXTK120N65X2 can be shipped within 24 hours after order. If you have any demands for IXTK120N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTK120N65X2 Atribi pwodwi yo

Nimewo Pati : IXTK120N65X2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 650V 120A TO-264
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 24 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 13600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1250W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264 (IXTK)
Pake / Ka : TO-264-3, TO-264AA

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