IXFR34N80 Pricing (USD) [5204PC Stock]
- 1 pcs$9.62165
- 30 pcs$9.57378
- Nimewo Pati:
- IXFR34N80
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 28A ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - SCR, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFR34N80 electronic components. IXFR34N80 can be shipped within 24 hours after order. If you have any demands for IXFR34N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR34N80 Atribi pwodwi yo
Nimewo Pati :
IXFR34N80
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 28A ISOPLUS247
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
240 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
416W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS247™
Pake / Ka :
ISOPLUS247™
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