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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDUL03N150CG

ON Semiconductor - NDUL03N150CG

KEY Part #: K6398107

NDUL03N150CG Pricing (USD) [29878PC Stock]

  • 1 pcs$1.37939
  • 270 pcs$0.91271
Nimewo Pati:
NDUL03N150CG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 1500V 2.5A TO3PF3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Objektif espesyal and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDUL03N150CG electronic components. NDUL03N150CG can be shipped within 24 hours after order. If you have any demands for NDUL03N150CG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDUL03N150CG Atribi pwodwi yo

Nimewo Pati : NDUL03N150CG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 1500V 2.5A TO3PF3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 10.5 Ohm @ 1.25A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 650pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta), 50W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P(L)
Pake / Ka : TO-3PL

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