IRF7341TRPBF Pricing (USD) [170908PC Stock]
- 1 pcs$0.41810
- 10 pcs$0.37002
- 100 pcs$0.27665
- 500 pcs$0.21455
- 1,000 pcs$0.16938
- Nimewo Pati:
- IRF7341TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 55V 4.7A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7341TRPBF electronic components. IRF7341TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7341TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 55V 4.7A 8-SOIC
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.7A
RD sou (Max) @ Id, Vgs :
50 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
740pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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