BSO615NGHUMA1 Pricing (USD) [209768PC Stock]
- 1 pcs$0.17633
- Nimewo Pati:
- BSO615NGHUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO615NGHUMA1 electronic components. BSO615NGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO615NGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO615NGHUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO615NGHUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 60V 2.6A 8SOIC
Seri :
SIPMOS®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.6A
RD sou (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
380pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
PG-DSO-8
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