PMPB55ENEAX Pricing (USD) [398640PC Stock]
- 1 pcs$0.09278
- 3,000 pcs$0.08092
- Nimewo Pati:
- PMPB55ENEAX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 4A 6DFN2020MD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Tiristors - TRIACs and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB55ENEAX electronic components. PMPB55ENEAX can be shipped within 24 hours after order. If you have any demands for PMPB55ENEAX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB55ENEAX Atribi pwodwi yo
Nimewo Pati :
PMPB55ENEAX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V 4A 6DFN2020MD
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
56 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
435pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.65W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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