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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDG6321C-F169

ON Semiconductor - FDG6321C-F169

KEY Part #: K6523416

[4173PC Stock]

    Nimewo Pati:
    FDG6321C-F169
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDG6321C-F169 electronic components. FDG6321C-F169 can be shipped within 24 hours after order. If you have any demands for FDG6321C-F169, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDG6321C-F169 Atribi pwodwi yo

    Nimewo Pati : FDG6321C-F169
    Manifakti : ON Semiconductor
    Deskripsyon : INTEGRATED CIRCUIT
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 25V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 500mA (Ta), 410mA (Ta)
    RD sou (Max) @ Id, Vgs : 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 2.3nC @ 4.5V, 1.5nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 10V, 62pF @ 10V
    Pouvwa - Max : 300mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-TSSOP, SC-88, SOT-363
    Pake Aparèy Founisè : SC-88/SC70-6/SOT-363

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