IXYS - IXTH6N120

KEY Part #: K6394644

IXTH6N120 Pricing (USD) [11318PC Stock]

  • 1 pcs$4.02496
  • 30 pcs$4.00494

Nimewo Pati:
IXTH6N120
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1200V 6A TO-247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in IXYS IXTH6N120 electronic components. IXTH6N120 can be shipped within 24 hours after order. If you have any demands for IXTH6N120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH6N120 Atribi pwodwi yo

Nimewo Pati : IXTH6N120
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1200V 6A TO-247AD
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.6 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1950pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3