SSM6N61NU,LF Pricing (USD) [622023PC Stock]
- 1 pcs$0.06574
- 3,000 pcs$0.06541
- Nimewo Pati:
- SSM6N61NU,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 4A UDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6N61NU,LF electronic components. SSM6N61NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6N61NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N61NU,LF Atribi pwodwi yo
Nimewo Pati :
SSM6N61NU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 20V 4A UDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
33 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
3.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
410pF @ 10V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-UDFNB (2x2)
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