FCPF850N80Z Pricing (USD) [76415PC Stock]
- 1 pcs$0.51169
- 1,000 pcs$0.45014
- Nimewo Pati:
- FCPF850N80Z
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 6A TO220F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FCPF850N80Z electronic components. FCPF850N80Z can be shipped within 24 hours after order. If you have any demands for FCPF850N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCPF850N80Z Atribi pwodwi yo
Nimewo Pati :
FCPF850N80Z
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 6A TO220F
Seri :
SuperFET® II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
850 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 600µA
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1315pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
28.4W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220F
Pake / Ka :
TO-220-3 Full Pack
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