Toshiba Semiconductor and Storage - TK560A60Y,S4X

KEY Part #: K6398118

TK560A60Y,S4X Pricing (USD) [76032PC Stock]

  • 1 pcs$0.56443
  • 50 pcs$0.45071
  • 100 pcs$0.39439
  • 500 pcs$0.28931
  • 1,000 pcs$0.22840

Nimewo Pati:
TK560A60Y,S4X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 7A TO220SIS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK560A60Y,S4X electronic components. TK560A60Y,S4X can be shipped within 24 hours after order. If you have any demands for TK560A60Y,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK560A60Y,S4X Atribi pwodwi yo

Nimewo Pati : TK560A60Y,S4X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 7A TO220SIS
Seri : DTMOSV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 560 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 240µA
Chaje Gate (Qg) (Max) @ Vgs : 14.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 30W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack

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