Nimewo Pati :
SI8489EDB-T2-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V MICROFOOT
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 10V
RD sou (Max) @ Id, Vgs :
44 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
765pF @ 10V
Disipasyon Pouvwa (Max) :
780mW (Ta), 1.8W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-Microfoot