Rohm Semiconductor - ES6U2T2R

KEY Part #: K6421610

ES6U2T2R Pricing (USD) [1005605PC Stock]

  • 1 pcs$0.04066
  • 8,000 pcs$0.04046

Nimewo Pati:
ES6U2T2R
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 1.5A WEMT6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor ES6U2T2R electronic components. ES6U2T2R can be shipped within 24 hours after order. If you have any demands for ES6U2T2R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES6U2T2R Atribi pwodwi yo

Nimewo Pati : ES6U2T2R
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 20V 1.5A WEMT6
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1.8nC @ 4.5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 110pF @ 10V
Karakteristik FET : Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-WEMT
Pake / Ka : SOT-563, SOT-666