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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CXDM3069N TR

Central Semiconductor Corp - CXDM3069N TR

KEY Part #: K6399777

CXDM3069N TR Pricing (USD) [243544PC Stock]

  • 1 pcs$0.16789
  • 1,000 pcs$0.16706
Nimewo Pati:
CXDM3069N TR
Manifakti:
Central Semiconductor Corp
Detaye deskripsyon:
MOSFET N-CH 30V 6.9A SOT-89.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Central Semiconductor Corp CXDM3069N TR electronic components. CXDM3069N TR can be shipped within 24 hours after order. If you have any demands for CXDM3069N TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CXDM3069N TR Atribi pwodwi yo

Nimewo Pati : CXDM3069N TR
Manifakti : Central Semiconductor Corp
Deskripsyon : MOSFET N-CH 30V 6.9A SOT-89
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : 12V
Antre kapasite (Ciss) (Max) @ Vds : 580pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-89
Pake / Ka : TO-243AA
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