Diodes Incorporated - DMG7N65SCT

KEY Part #: K6418846

DMG7N65SCT Pricing (USD) [80028PC Stock]

  • 1 pcs$0.48859
  • 50 pcs$0.45882

Nimewo Pati:
DMG7N65SCT
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 650V 7.7A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG7N65SCT Atribi pwodwi yo

Nimewo Pati : DMG7N65SCT
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 650V 7.7A TO220AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25.2nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 886pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3