Vishay Siliconix - IRF9630PBF

KEY Part #: K6406639

IRF9630PBF Pricing (USD) [63618PC Stock]

  • 1 pcs$0.53935
  • 10 pcs$0.47747
  • 100 pcs$0.37746
  • 500 pcs$0.27691
  • 1,000 pcs$0.21861

Nimewo Pati:
IRF9630PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 200V 6.5A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRF9630PBF electronic components. IRF9630PBF can be shipped within 24 hours after order. If you have any demands for IRF9630PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9630PBF Atribi pwodwi yo

Nimewo Pati : IRF9630PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 200V 6.5A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 800 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 74W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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