[861PC Stock]
- Nimewo Pati:
- TPC8115(TE12L,Q,M)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 20V 10A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC8115(TE12L,Q,M) electronic components. TPC8115(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8115(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8115(TE12L,Q,M) Atribi pwodwi yo
Nimewo Pati :
TPC8115(TE12L,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 20V 10A SOP8 2-6J1B
Seri :
U-MOSIV
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
115nC @ 5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
9130pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP (5.5x6.0)
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)
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