2N7002ET1G Pricing (USD) [2578478PC Stock]
- 1 pcs$0.01434
- 3,000 pcs$0.01054
- Nimewo Pati:
- 2N7002ET1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 260MA SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - RF, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor 2N7002ET1G electronic components. 2N7002ET1G can be shipped within 24 hours after order. If you have any demands for 2N7002ET1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7002ET1G Atribi pwodwi yo
Nimewo Pati :
2N7002ET1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 60V 260MA SOT-23
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
260mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.5 Ohm @ 240mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.81nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
26.7pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300mW (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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