EPC - EPC2110ENGRT

KEY Part #: K6524902

EPC2110ENGRT Pricing (USD) [91507PC Stock]

  • 1 pcs$0.45551
  • 2,500 pcs$0.45324

Nimewo Pati:
EPC2110ENGRT
Manifakti:
EPC
Detaye deskripsyon:
GAN TRANS 2N-CH 120V BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in EPC EPC2110ENGRT electronic components. EPC2110ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2110ENGRT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2110ENGRT Atribi pwodwi yo

Nimewo Pati : EPC2110ENGRT
Manifakti : EPC
Deskripsyon : GAN TRANS 2N-CH 120V BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Common Source
Karakteristik FET : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.4A
RD sou (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs : 0.8nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 80pF @ 60V
Pouvwa - Max : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die