ON Semiconductor - NTMD6P02R2G

KEY Part #: K6523315

NTMD6P02R2G Pricing (USD) [242232PC Stock]

  • 1 pcs$0.15269
  • 2,500 pcs$0.15058

Nimewo Pati:
NTMD6P02R2G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 20V 4.8A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMD6P02R2G electronic components. NTMD6P02R2G can be shipped within 24 hours after order. If you have any demands for NTMD6P02R2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMD6P02R2G Atribi pwodwi yo

Nimewo Pati : NTMD6P02R2G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 20V 4.8A 8SOIC
Seri : -
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.8A
RD sou (Max) @ Id, Vgs : 33 mOhm @ 6.2A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 1700pF @ 16V
Pouvwa - Max : 750mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC

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