Nimewo Pati :
NTMD6P02R2G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2P-CH 20V 4.8A 8SOIC
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A
RD sou (Max) @ Id, Vgs :
33 mOhm @ 6.2A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1700pF @ 16V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC