IXYS - IXFH42N60P3

KEY Part #: K6397751

IXFH42N60P3 Pricing (USD) [13474PC Stock]

  • 1 pcs$3.52119
  • 10 pcs$3.14219
  • 100 pcs$2.57660
  • 500 pcs$2.08641
  • 1,000 pcs$1.75963

Nimewo Pati:
IXFH42N60P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 42A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXFH42N60P3 electronic components. IXFH42N60P3 can be shipped within 24 hours after order. If you have any demands for IXFH42N60P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH42N60P3 Atribi pwodwi yo

Nimewo Pati : IXFH42N60P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 42A TO247
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 42A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 185 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 5150pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 830W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3

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