IXKK85N60C Pricing (USD) [2715PC Stock]
- 1 pcs$17.54980
- 10 pcs$16.23542
- 100 pcs$13.86583
- Nimewo Pati:
- IXKK85N60C
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 85A TO-264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in IXYS IXKK85N60C electronic components. IXKK85N60C can be shipped within 24 hours after order. If you have any demands for IXKK85N60C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKK85N60C Atribi pwodwi yo
Nimewo Pati :
IXKK85N60C
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 85A TO-264
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
85A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
36 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
650nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-264A
Pake / Ka :
TO-264-3, TO-264AA
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