IXYS - IXFH160N15T2

KEY Part #: K6395071

IXFH160N15T2 Pricing (USD) [17174PC Stock]

  • 1 pcs$2.65280
  • 90 pcs$2.63960

Nimewo Pati:
IXFH160N15T2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 150V 160A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in IXYS IXFH160N15T2 electronic components. IXFH160N15T2 can be shipped within 24 hours after order. If you have any demands for IXFH160N15T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH160N15T2 Atribi pwodwi yo

Nimewo Pati : IXFH160N15T2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 150V 160A TO-247
Seri : GigaMOS™, HiPerFET™, TrenchT2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 253nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 15000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 880W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3