IXYS - IXFB210N30P3

KEY Part #: K6397784

IXFB210N30P3 Pricing (USD) [4440PC Stock]

  • 1 pcs$10.73466
  • 10 pcs$9.92806
  • 100 pcs$8.47890

Nimewo Pati:
IXFB210N30P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 300V 210A PLUS264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFB210N30P3 electronic components. IXFB210N30P3 can be shipped within 24 hours after order. If you have any demands for IXFB210N30P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFB210N30P3 Atribi pwodwi yo

Nimewo Pati : IXFB210N30P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 300V 210A PLUS264
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 14.5 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 268nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 16200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1890W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PLUS264™
Pake / Ka : TO-264-3, TO-264AA

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