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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDTL01N60ZT3G

ON Semiconductor - NDTL01N60ZT3G

KEY Part #: K6402661

NDTL01N60ZT3G Pricing (USD) [2627PC Stock]

  • 4,000 pcs$0.06892
Nimewo Pati:
NDTL01N60ZT3G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 0.25A SOT223-4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDTL01N60ZT3G electronic components. NDTL01N60ZT3G can be shipped within 24 hours after order. If you have any demands for NDTL01N60ZT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDTL01N60ZT3G Atribi pwodwi yo

Nimewo Pati : NDTL01N60ZT3G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V 0.25A SOT223-4
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 15 Ohm @ 400mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 4.9nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 92pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223 (TO-261)
Pake / Ka : TO-261-4, TO-261AA

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