IXFQ12N80P Pricing (USD) [26643PC Stock]
- 1 pcs$1.71005
- 30 pcs$1.70154
- Nimewo Pati:
- IXFQ12N80P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 12A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFQ12N80P electronic components. IXFQ12N80P can be shipped within 24 hours after order. If you have any demands for IXFQ12N80P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ12N80P Atribi pwodwi yo
Nimewo Pati :
IXFQ12N80P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 12A TO-3P
Seri :
HiPerFET™, PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
850 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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