IXYS - IXTT30N50L2

KEY Part #: K6392633

IXTT30N50L2 Pricing (USD) [7658PC Stock]

  • 1 pcs$6.18743
  • 10 pcs$5.62554
  • 100 pcs$4.78173
  • 500 pcs$4.07851

Nimewo Pati:
IXTT30N50L2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 30A TO-268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTT30N50L2 electronic components. IXTT30N50L2 can be shipped within 24 hours after order. If you have any demands for IXTT30N50L2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTT30N50L2 Atribi pwodwi yo

Nimewo Pati : IXTT30N50L2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 30A TO-268
Seri : Linear L2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA