Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET 2P-CH 20V 4A 8SOIC
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
80 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO