IXYS - IXTQ160N085T

KEY Part #: K6408759

[516PC Stock]


    Nimewo Pati:
    IXTQ160N085T
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 85V 160A TO-3P.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Diodes - RF, Modil pouvwa chofè, Diodes - Zener - Arrays and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in IXYS IXTQ160N085T electronic components. IXTQ160N085T can be shipped within 24 hours after order. If you have any demands for IXTQ160N085T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTQ160N085T Atribi pwodwi yo

    Nimewo Pati : IXTQ160N085T
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 85V 160A TO-3P
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 85V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 6 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 164nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 6400pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 360W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P
    Pake / Ka : TO-3P-3, SC-65-3