Renesas Electronics America - RJK0353DPA-WS#J0B

KEY Part #: K6400967

[3213PC Stock]


    Nimewo Pati:
    RJK0353DPA-WS#J0B
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    MOSFET N-CH.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - SCR, Tiristors - TRIACs, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America RJK0353DPA-WS#J0B electronic components. RJK0353DPA-WS#J0B can be shipped within 24 hours after order. If you have any demands for RJK0353DPA-WS#J0B, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJK0353DPA-WS#J0B Atribi pwodwi yo

    Nimewo Pati : RJK0353DPA-WS#J0B
    Manifakti : Renesas Electronics America
    Deskripsyon : MOSFET N-CH
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 5.2 mOhm @ 17.5A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2180pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 40W (Ta)
    Operating Tanperati : 150°C
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : WPAK(3F) (5x6)
    Pake / Ka : 8-PowerVDFN