Deskripsyon :
GANFET 2NCH 120V 3.4A DIE
FET Kalite :
2 N-Channel (Dual) Common Source
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A
RD sou (Max) @ Id, Vgs :
60 mOhm @ 4A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
0.8nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
80pF @ 60V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Pake Aparèy Founisè :
Die