Infineon Technologies - BSS214NWH6327XTSA1

KEY Part #: K6421604

BSS214NWH6327XTSA1 Pricing (USD) [978256PC Stock]

  • 1 pcs$0.03781
  • 3,000 pcs$0.02662

Nimewo Pati:
BSS214NWH6327XTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 20V 1.5A SOT323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS214NWH6327XTSA1 Atribi pwodwi yo

Nimewo Pati : BSS214NWH6327XTSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 20V 1.5A SOT323
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 140 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 3.7µA
Chaje Gate (Qg) (Max) @ Vgs : 0.8nC @ 5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 143pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT323-3
Pake / Ka : SC-70, SOT-323